Simulation of Ion Implantation using Monte Carlo Method for Investigation on Ion Trajectories

Abstract

The goal of simulating the ion implantation is to predict the distribution of implanted ions in the target and also to predict the amount of damage generated in the target. During ion implantation process, accelerated ions penetrate the surface of the wafer and come to rest in its interior after losing energy through interactions with the nuclei and electrons of the target. This simulation of ion implantation for ion trajectories is divided into three diffusion models which they are Default Model, Monte Carlo (MC) Model and Old Monte Carlo (OMC) Model. The software used to simulate the result is TSUPREM4. To compare the difference between these three models, different implantation energies and numbers of ions trajectories are used to investigate the behavior of dopant, interstitials, vacancies and clustering. Two special structures are built in this project in which one of the structures is implanted at the upper left side and another one is implanted at the upper middle of the structure. As the result, the more ion trajectories are used in the simulation using Monte Carlo method, the more accurate is the result and the higher the implantation energy, the deeper ions can penetrate into the substrate. At the end of the work, it is expected that the investigation on ion trajectories could lead to the improvement of device simulation especially in bipolar and CMOS transistors before a realistic device can be fabricated.