Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/1333
Title: Reactive Ion Etching (RIE) Etched Wet-Silica-On-Silicon Analysis for Fluid Wettability
Authors: Noor Aini Hamimah Abd. Rahim
Prabakaran Poopalan, Assoc. Prof. Dr. (Advisor)
Keywords: Silica
Reactive Ion Etching (RIE)
Silica-on-silicon analysis
Surface roughness analysis
Atomic Force Microscope
Wet-Silica-On-Silicon Analysis
Issue Date: Mar-2007
Publisher: Universiti Malaysia Perlis
Abstract: RIE etched wet silica-on-silicon analysis is more to surface roughness analysis which analysis on silica substrate after plasma etching especially on de-ionized water droplets testing for fluid wettability scope. The thick oxide is needed for RIE purpose and characterized the etching and surface profile using Atomic Force Microscope. The contact angles measurement is required for the wettability analysis thus to characterized the de-ionized water droplets profile using optical inspection. This contact angles must be more than 90° for non-wetting profile or less than 90° for wetting profile. All the entire measurements angles allowed gives the silica substrate surface analysis results that related to RIE etched wet silica-on-silicon analysis. In this project, all the contact angles are wetting profile which is homogeneous types.
URI: http://dspace.unimap.edu.my/123456789/1333
Appears in Collections:School of Microelectronic Engineering (FYP)

Files in This Item:
File Description SizeFormat 
Abstract, Acknowledgment.pdf102.99 kBAdobe PDFView/Open
Conclusion.pdf237.57 kBAdobe PDFView/Open
Introduction.pdf81.13 kBAdobe PDFView/Open
Literature review.pdf121.98 kBAdobe PDFView/Open
Methodology.pdf131.32 kBAdobe PDFView/Open
References and appendix.pdf3.29 MBAdobe PDFView/Open
Results and discussion.pdf550 kBAdobe PDFView/Open


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