Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/10168
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dc.contributor.authorJulie J., Mohamed-
dc.contributor.authorYau, C. Siong-
dc.contributor.authorZainal A., Ahmad-
dc.date.accessioned2010-11-09T04:46:33Z-
dc.date.available2010-11-09T04:46:33Z-
dc.date.issued2010-06-09-
dc.identifier.citationp.315-318en_US
dc.identifier.isbn978-967-5760-02-0-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/10168-
dc.descriptionInternational Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.en_US
dc.description.abstractTi3SiC2 was synthesized by modified-SHS system through arc melting. Elemental powder of titanium, silicon, and graphite were weighed according to the stoichiometric ratio of Ti:Si:C = 3:1:2. The powders were mixed and milled by high speed mill for 1 hour. 120 MPa of pressure is used for the compaction. The samples were sent for arc melting process and the effect of arc melting duration (60s, 75s and 90s) was studied. The welding current was varied (70A, 100A, and 130A) to get the best parameters to produce Ti3SiC2 in high composition. The samples were sent for XRD analysis and SEM observation. For arc melting, the best composition of Ti3SiC2 was produced with 100A welding current for 90s instead of impurity TiC formation. Hence, Ti3SiC2 can be produced via modified-SHS through arc melting with mixing duration of 1 hour using high speed mill, and arc melting duration of 90s with weld current of 100A.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.relation.ispartofseriesProceedings of the International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) 2010en_US
dc.subjectTi3SiC2en_US
dc.subjectSelf-propagating high temperature synthesis (SHS)en_US
dc.subjectArc meltingen_US
dc.subjectInternational Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)en_US
dc.titleEffect of process parameters on the production of Ti3SiC2 via modified-SHS through arc meltingen_US
dc.typeWorking Paperen_US
dc.publisher.departmentSchool of Materials Engineering & School of Environmental Engineeringen_US
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