Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/10157
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dc.contributor.authorYushamdan, Yusof-
dc.contributor.authorMuslim, A. Abid-
dc.contributor.authorNg, Sha Shiong-
dc.contributor.authorHaslan, Abu Hassan-
dc.contributor.authorZainuriah, Hassan-
dc.date.accessioned2010-11-01T09:29:15Z-
dc.date.available2010-11-01T09:29:15Z-
dc.date.issued2010-06-09-
dc.identifier.citationp.341-343en_US
dc.identifier.isbn978-967-5760-02-0-
dc.identifier.urihttp://dspace.unimap.edu.my/123456789/10157-
dc.descriptionInternational Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.en_US
dc.description.abstractWe present the structural properties of ternary InxGa1-xN (0.20 x 0.80) alloys grown on sapphire substrate by plasma-assisted molecular beam epitaxy. High resolution X-ray diffraction (HR-XRD) analyses were used to investigate the phase and crystalline quality of ternary InxGa1-xN. From the XRD phase analysis, it is confirmed that the films InxGa1-xN had wurtzite structure and without any phase separation. In addition, it is found that the Bragg angle of the (0002) InxGa1-xN peak gradually decreases as the In compositions increases, indicating the increases in the lattice constant c of the InxGa1-xN ternary alloys. Apart from that, the composition of InxGa1-xN epilayers is determined by applying the Vegard’s law. Finally, the variation of the crystalline quality as a function of In composition is investigated through the XRD rocking curve analyses.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.relation.ispartofseriesProceedings of the International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) 2010en_US
dc.subjectIII-nitridesen_US
dc.subjectTernary alloyen_US
dc.subjectX-ray diffraction (XRD)en_US
dc.subjectInGaNen_US
dc.subjectInternational Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)en_US
dc.titleXRD analyses of InxGa1-xN (0.20 x 0.80) ternary alloysen_US
dc.typeArticleen_US
dc.publisher.departmentSchool of Materials Engineering & School of Environmental Engineeringen_US
dc.contributor.urlyushamdan@notes.usm.myen_US
dc.contributor.urlmuslim_abid@yahoo.comen_US
dc.contributor.urlshashiong@usm.myen_US
dc.contributor.urlhaslan@usm.myen_US
dc.contributor.urlzai@usm.myen_US
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