• Login
    View Item 
    •   DSpace Home
    • Journal Articles
    • International Journal of Nanoelectronics and Materials (IJNeaM)
    • View Item
    •   DSpace Home
    • Journal Articles
    • International Journal of Nanoelectronics and Materials (IJNeaM)
    • View Item
    JavaScript is disabled for your browser. Some features of this site may not work without it.

    Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method

    Thumbnail
    View/Open
    Investigation of the absorption coefficient, refractive index.pdf (232.8Kb)
    Date
    2009
    Author
    Naser M., Ahmed
    Zaliman, Sauli
    Uda, Hashim
    Yarub, Al-Douri
    Metadata
    Show full item record
    Abstract
    The design of optoelectronic devices fabricated from III-Nitride materials is aided by knowledge of refractive index and absorption coefficient of these materials .The optical properties of Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN grown by MOVPE on sapphire were investigated by means of transmittance measurements .The optical transmission method is successfully used to determine the refractive index (n), absorption coefficient (α), film thickness and energy gap of three samples of film over the spectral range of (1-5 eV) .
    URI
    http://dspace.unimap.edu.my/123456789/7123
    Collections
    • International Journal of Nanoelectronics and Materials (IJNeaM) [344]
    • Uda Hashim, Prof. Dr. [253]

    Atmire NV

    Perpustakaan Tuanku Syed Faizuddin Putra (PTSFP) | Send Feedback
     

     

    Browse

    All of UniMAP Library Digital RepositoryCommunities & CollectionsBy Issue DateAuthorsTitlesSubjectsThis CollectionBy Issue DateAuthorsTitlesSubjects

    My Account

    LoginRegister

    Statistics

    View Usage Statistics

    Atmire NV

    Perpustakaan Tuanku Syed Faizuddin Putra (PTSFP) | Send Feedback