Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices
Alwan, M. Alwan
Narges, Z. Abdulzahra
Naser Mahmoud, Ahmed
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The morphological properties of the freshly and oxidized porous silicon at oxidation time (60, 90) sec were studied. Eyes, can see a blue emission from PSi after thermal oxidation, we can obvious increasing energy gab, that due to decrease silicon column (nano particles).Pore size and shape of n-type wafers are estimate and correlated with optical properties before and after rapid thermal oxidation (RTO).