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dc.contributor.authorC.M., Cheh
dc.contributor.authorMohd Khairuddin, Md Arshad
dc.contributor.authorRuslinda, Abdul Rahim
dc.contributor.authorC., Ibau
dc.contributor.authorVoon, Chun Hong
dc.contributor.authorRamzan, Mat Ayub
dc.contributor.authorUda, Hashim
dc.date.accessioned2020-10-26T06:20:30Z
dc.date.available2020-10-26T06:20:30Z
dc.date.issued2016
dc.identifier.citationMATEC Web of Conferences, vol.78, 2016, 7 pagesen_US
dc.identifier.issn2261-236X (online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/68513
dc.descriptionLink to publisher's homepage at https://www.matec-conferences.org/en_US
dc.description.abstractThe reverse recovery lifetime of a diode is one the key parameter in power electronics market. To make a diode with fast switching speed, diodes are often doped with impurities such as gold and platinum to improve its lifetime. In this works, we present the reverse recovery lifetime improvement of a power rectifier diode through platinum diffusion in the intrinsic region in between P-N junction using Design of Experiment (DOE) approach. A commercial available power rectifier is used in this study. We factored in the temperature and thermal diffusion time during the platinum diffusion process in our DOE. From results, DOE 2 (with shorter thermal duration and high temperature for diffusion) is selected based on meeting requirement for forward voltage and reverse recovery specifications i.e. forward voltage at 1.8V and reverse recovery time at 27ns.en_US
dc.language.isoenen_US
dc.publisherEDP Sciencesen_US
dc.subjectPlatinum diffusionen_US
dc.subjectDiodeen_US
dc.subjectPower rectifier diodeen_US
dc.titleThe Impacts of Platinum Diffusion to the Reverse Recovery Lifetime of a High Power Diode Devicesen_US
dc.typeArticleen_US
dc.identifier.urlhttps://www.matec-conferences.org/
dc.contributor.urlmohd.khairuddin@unimap.edu.myen_US


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