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dc.contributor.authorMohd Zamzuri, Mohammad Zain
dc.contributor.authorJunji, Sasano
dc.contributor.authorFariza, Mohamad
dc.contributor.authorMasanobu, Izaki
dc.date.accessioned2016-11-28T08:26:18Z
dc.date.available2016-11-28T08:26:18Z
dc.date.issued2014-10
dc.identifier.citationECS Transactions, vol.64 (15), 2014, pages 21-26en_US
dc.identifier.issn1938-6737 (online)
dc.identifier.issn1938-5862
dc.identifier.urihttp://ecst.ecsdl.org/
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/44152
dc.descriptionLink to publisher's homepage at http://ecst.ecsdl.org/en_US
dc.description.abstractThe <111>-Cu2O/<0001>-ZnO photovoltaic (PV) device has been constructed by a photon-assisted electrochemical reaction in aqueous solutions, and the effect of the insertion of the TiO2 layer prepared by a sol-gel technique on the photovoltaic performance was investigated. The structural, optical, and electrical characterizations were carried out with XRD, FE-SEM, UV-Vis-NIR spectrophotometer, and solar simulator. The <0001>-ZnO/TiO2/<111>-Cu2O PV-devices showed a photovoltaic performance under AM1.5 illumination, and the performance changed depending on the preparation condition for the TiO2 layer. The substrate-type <0001>-ZnO/TiO2/<111>-Cu2O PV device prepared under optimized condition showed a photovoltaic performance with the short-circuit current density of 2.14 mAcm-2en_US
dc.language.isoenen_US
dc.publisherThe Electrochemical Society (ECS)en_US
dc.subjectPhotonsen_US
dc.subjectElectrochemical reactionsen_US
dc.subjectPhotovoltaic devicesen_US
dc.subjectSol-gel techniqueen_US
dc.titlePhoton-assisted electrochemical construction of <0001>-n-ZnO/<111>-p-Cu2O photovoltaic devices with intermediate TiO2 layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1149/06415.0021ecst
dc.contributor.urlmzamzuri@unimap.edu.myen_US


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