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dc.contributor.authorFakhri, Makram A.
dc.date.accessioned2016-04-22T10:27:32Z
dc.date.available2016-04-22T10:27:32Z
dc.date.issued2016
dc.identifier.citationInternational Journal of Nanoelectronics and Materials, vol.9 (1), 2016, pages 93-102en_US
dc.identifier.issn1985-5761 (Printed)
dc.identifier.issn1997-4434 (Online)
dc.identifier.urihttp://dspace.unimap.edu.my:80/xmlui/handle/123456789/41331
dc.descriptionLink to publisher's homepage at http://ijneam.unimap.edu.my/en_US
dc.description.abstractHigh quality transparent conductive silver oxide (Ag₂O) nanocrystals thin films were prepared successfully using thermal evaporation method using pure Ag metal, followed by Oxidation process under two different oxidation temperature. Optical properties show high transparency of about 70% and decrease to 55 % at lower oxidation temperature . Optical band gab of prepared film at optimum condition is about 2.88 and 2.92 eV. Surface morphology measured using AFM give a triangle like structure with average roughness of (2.65 nm). The X-ray diffraction insures the formation of polycrystalline silver oxide nanostructure thin film.en_US
dc.language.isoenen_US
dc.publisherUniversiti Malaysia Perlisen_US
dc.subjectSilver Oxideen_US
dc.subjectThin filmen_US
dc.subjectOptical propertiesen_US
dc.subjectThermal evaporationen_US
dc.subjectAnnealingen_US
dc.titleAnnealing effects on opto-electronic properties of Ag₂O films growth using thermal evaporation techniquesen_US
dc.typeArticleen_US
dc.contributor.urlmokaram_76@yahoo.comen_US


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