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The alignment of single SWNTs between electrode using dielectrophoresis
(Universiti Malaysia Perlis (UniMAP), 2012-06-18)
This paper presents the development and fabrication of electrical devices based on alignment of carbon nanotubes (CNTs) in single bundle of single-walled carbon nanotubes (sb-SWNTs) using dielectrophoresis (DEP). The Silicon ...
Negative Pattern Scheme (NPS) design for nanowire formation using scanning electron microscope based electron beam lithography technique
(Trans Tech Publications, 2014)
In this work, we report the used of Negative Pattern Scheme (NPS) by Electron Microscope Based Electron Beam Lithography (EBL) Technique in connection with scanning electron microscope (SEM) for creating extremely fine ...
Fabrication of silicon nanowires by electron beam lithography and thermal oxidation size reduction method
(Trans Tech Publications, 2014)
A simple method for the fabrication of silicon nanowires using Electron Beam Lithography (EBL) combined with thermal oxidation size reduction method is presented. EBL is used to define the initial silicon nanowires of ...
Application of e-beam lithography for nanowire development
(Universiti Malaysia Perlis (UniMAP), 2010-10-16)
Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly ...
Design and fabrication of silicon nanowire based sensor
(Electrochemical Science Group (ESG), 2013)
This paper reports the process development of silicon nanowires sensor requires both the fabrication of nanoscale diameter wires and standard integration to CMOS process. By using silicon-on-insulator (SOI) wafer as a ...
Pattern designed for combination of optical lithography and electron beam lithography
(Universiti Malaysia Pahang, 2009-06-20)
In this paper the fabricated pattern of
nanometer and micrometer structures created with
electron beam lithography (EBL) and optical
lithography on silicon on insulator (SOI) material
is presented. The resist used to ...
Man-2403 resist development for electron beam lithography process
(Universiti Malaysia Pahang, 2009-06-20)
Line-width of resist patterns is more
susceptible to the developing time than the
thickness of the undeveloped resist. This project
focused on the development of MaN-2403 resist
for e-beam lithography process. The ...
Nanowire formation using electron beam lithography
(American Institute of Physics, 2009-06-01)
Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly ...