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Asymmetrical Double Gate: significant improvement in ultra-scaled sol mosfet
(Universiti Malaysia Perlis (UniMAP), 2014-05)
Fully-depletion operation is mandatory requirement for ultra-scaled devices (Le. < 45 nm technology) which only can be achieved either multi-gate (Le. FinFET) or thin body Silicon-on-Insulator (SOl). Thin body SOl offers ...