Browsing School of Microelectronic Engineering (Articles) by Title

Now showing items 147-166 of 185

    • Relationship between controllable process parameters on bump height in ENIG 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Fairul Afzal, Ahmad Fuad; Ehkan, Phaklen, Dr.; Muhamad Hafiz,  Ab Aziz (Trans Tech Publications, 2013)
      This paper reports the factors that affect the bump height in electroless nickel immersion gold (ENIG) and their interrelation between each other. Bump height is a critical issue that needs to be investigated because a ...

    • Reproducibility of silicon single electron quantum dot transistor 

      Uda, Hashim; Sutikno, Madnarski (Nano Science and Technology Institute, 2006)
      In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET ...

    • The SEM & AFM images of MEH-PPV films below CLA region 

      Nurjuliana, Juhari; Wan Haliza, Abd Majid, Prof. Dr.; A. I., Zainol (Elsevier Ltd., 2013)
      Poly [2-methoxy-5--ethylhexyloxy)-1,4-phenylene vinylene] (MEH-PPV) is an example of conducting polymer that used to fabricate an organic light emitting diode (OLED). The surface roughness and homogeneity of MEH-PPV film ...

    • Shear ram height investigation for gold wire bond shear test 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Ahmad Husni, Mohd Shapri; Taniselass, Steven; Ong, T.S. (Trans Tech Publications, 2012-12)
      This paper presents the simulation of gold wire bond shear test. The stress and strain response of the gold ball bond during wire bond shear was examined. The simulation was done using a A 3D non-linear finite element ...

    • Shear ram speed characterization for copper wire bond shear test 

      Zaliman, Sauli, Prof. Madya Dr.; Retnasamy, Vithyacharan; Ahmad Husni, Mohd Shapri; Norazeani, Abdul Rahman; Wan Mokhzani, Wan Norhaimi; Taniselass, Steven; Abdul Halis, Abdul Aziz (Trans Tech Publications, Switzerland., 2012)
      This paper presents the evaluation of the stress and strain response of the copper ball bond during wire bond shear test using finite element analysis. A 3D non-linear finite element model was developed for the simulation. ...

    • Shear speed analysis on Sn-3.9Ag-0.6Cu Solder 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Fairul Afzal, Ahmad Fuad; Ehkan, Phaklen, Dr.; Ong, Tee Say; Vairavan, Rajendaran (Trans Tech Publications (TTP), 2013)
      Ball Grid Array (BGA) is a type of semiconductor interconnection used in Integrated Circuit (IC) which is being scaled down to micro and nano size. The reliability of BGA in IC becomes a concern as the size of IC reduces. ...

    • Shear strain analysis in FSS microchannel 

      Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Nor Shakirina, Nadzri; Tan, Hsio Mei; Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr. (AENSI Publications, 2013-10)
      Microfluidics has motivated the development of various fields in biological engineering due to its advantages. The favorable benefits of using microfluidicsare being easy to fabricate, requirement of minimal fluid volumes, ...

    • Silica microchannel fabrication using fluorine based rie with alas a mask 

      Wan Mokhzani, Wan Norhaimi; Retnasamy, Vithyacharan; Zaliman, Sauli, Assoc. Prof. Dr.; Taniselass, Steven; Ahmad Husni, Mohd Shapri; Norazeani, Abdul Rahman; Abdul Halis, Abdul Aziz (INSInet Publications, 2012-09)
      The silica microchannel fabrication process has been executed with Al thin films as the sacrificial layer during Reactive Ion Etching Process (RIE). CF4/Ar and SF6/Ar plasmas has been used to investigate etch rate of Al ...

    • A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation 

      Madnarski Sutikno; Uda, Hashim, Prof. Dr.; Zul Azhar, Zahid Jamal, Prof. Dr. (Elsevier B.V., 2007-05)
      The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, ...

    • Simulation of 1GHz center frequency SAW using CST software for biosensor application 

      Mohd Rosydi, Zakaria; Uda, Hashim, Prof. Dr.; M. H. I., Mohd Amin; Tijjani Adam, Shuwa; M. Wesam, Al-Mufti (IDOSI Publications, 2013)
      Surface Acoustic Wave (SAW) is a one of the essential components that used for sensor application to detect in various fields. The high center frequencywill improve the sensitivity of SAW biosensor. Therefore, it's very ...

    • Simulation of Brillouin and Rayleigh scattering in distributed fibre optic for temperature and strain sensing application 

      Ali Hussain, Reshak, Prof. Dr.; Mukhzeer, Mohamad Shahimin, Dr.; Sohiful Anuar, Zainol Murad, Dr.; S., Azizan (Elsevier B.V., 2013)
      This paper presents simulations of a distributed fibre optic sensor for temperature and strain sensing. The behaviours of Brillouin and Rayleigh scattering in optical fibres are studied through the backscatter signals. The ...

    • Smart Rash Driver System via Internet of Things (IoT) 

      Kong, Sheau Tong; Mohd Natashah, Norizan; Ili Salwani, Mohamad (EDP Sciences, 2017)
      Nearly half a million accidents on Malaysians road occur in 2015. The aim of this research is to detect car speed, capture the photo of the speeding car and then transfer the data like car speed, date and time, location ...

    • Sol-gel synthesis and characterization of Ba1-xGdxTiO3+δ thin films on SiO2/Si substrates using spin-coating technique 

      Teh, Yen Chin; Ala’eddin, A. Saif; Prabakaran, Poopalan (Kaunas University of Technology (Lithuania), 2017)
      Ba1-xGdxTiO3+δ, at x = 0, 0.05, 0.1, 0.15, 0.2, (BGT) thin films have been fabricated on SiO2/Si substrate using sol-gel method. The microstructure and surface morphology of the fabricated films have been investigated ...

    • Structural and electronic properties of bulk GaP and AlP and their (GaP)n / (AlP)n superlattices 

      M., Merabet; S., Benalia; D., Rached; A., Bouhemadou; S., Omran; Ali H., Reshak; M., Rabah (Elsevier Ltd., 2011-02)
      The structural and the electronic properties of binary GaP and AlP compounds and their superlattices are investigated using the recent version of the first-principles full potential linear muffin-tin orbitals method ...

    • Structural and impedance spectroscopy study of Al-doped ZnO nanorods grown by sol-gel method 

      Muhammad, Kashif; Uda, Hashim, Prof. Dr.; Md. Eaqub, Ali; Ala'eddin Ahmad Jaber, Saif, Dr.; Syed Muhammad Usman, Ali; Willander, Magnus, Prof (Emerald Group Publishing Limited, 2012)
      Purpose – The purpose of this paper is to investigate the electrical transport mechanism of the Al-doped ZnO nanorods at different temperatures by employing impedance spectroscopy. Design/methodology/approach – Al-doped ...

    • Structural, elastic, electronic, optical and thermal properties of c-SiGe2N4 

      Bouhemadou, A.; Yarub K.A, Al-Douri; Khenata, R.; Haddadi, K. (Springer Verlag, 2009-09)
      We have investigated the structural, elastic, electronic, optical and thermal properties of c-SiGe2N4 by using the ultrasoft pseudopotential density functional method within the generalized gradient approximation. The ...

    • Structure refinement strategy of Li-based complex oxides using GSAS-EXPGUI software package 

      Mohd Sobri, Idris, Dr.; Rozana Aina, Maulat Osman, Dr.  (Trans Tech Publications, 2013)
      This paper discussed refinement strategy that been used to reveal crystallographic properties of lithium-based complex oxides with layered rock salt structure. Rietveld analysis using XRD data was used to determine the ...

    • The surface characteristics of under bump metallurgy (UBM) in electroless nickel immersion gold (ENIG) deposition 

      Mohd Khairuddin, Md Arshad; Ibrahim, Ahmad; Azman, Jalar; Ghazali, Omar (Elsevier Science, 2006)
      This paper discusses on the surface characteristics of each of the seven set-up process steps prior completion of under bump metallurgy (UBM) deposition. The Atomic Force Microscopy (AFM) and Scanning Electron Microscopy ...

    • Surface modification via wet chemical etching of single-crystalline silicon for photovoltaic application 

      Ali Hussain, Reshak, Prof. Dr.; Mukhzeer, Mohamad Shahimin, Dr.; Safizan, Shaari; N., Johan (Elsevier Ltd., 2013-11)
      The potential of solar cells have not been fully tapped due to the lack of energy conversion efficiency. There are three important mechanisms in producing high efficiency cells to harvest solar energy; reduction of light ...

    • The surface morphology characterization of electroless nickel immersion gold under bump metallurgy (UBM) using SEM 

      Mohd Khairuddin, Md Arshad; Mohd Nazrin, Md Isa; Sohiful Anuar, Zainol Murad (American Institute of Physics, 2007-05-09)
      This paper presents the surface morphology characterization at each process step in electroless nickel immersion gold (ENIG) deposition using Scanning Electron Microscope (SEM). The characterization start at initial bond ...