Now showing items 51-70 of 185

    • Effect of alignment mark architecture on alignment signal behavior in advanced lithography 

      Normah, Ahmad; Uda, Hashim; Mohd Jeffery, Manaf; Kader Ibrahim, Abdul Wahab (Universiti Malaya, 2007)
      Alignment mark architecture is divided into two types, which depending on where the mark is defined. Alignment mark that is defined through the contact masking steps is known as contact mark and alignment mark that is ...
    • Effect of the film thickness on the impedance behavior of sol-gel Ba 0.6Sr0.4TiO3 thin films 

      Saif, Ala'eddin A.; Poopalan, Prabakaran, Assoc. Prof. (Elsevier B. V., 2011-03-15)
      Perovskite Ba0.6Sr0.4TiO3 sol–gel thin films with different thicknesses are fabricated as MFM configuration to study the effect of the film thickness on the dielectric relaxation phenomenon and the ionic transport mechanism. ...
    • Effects of elevated temperatures on the thermal behavior and mechanical performance of fly ash geopolymer paste, mortar and lightweight concrete 

      Omar A., Abdulkareem; Mohd Mustafa Al Bakri, Abdullah; Kamarudin, Hussin, Brig. Jen. Dato' Prof. Dr.; Khairul Nizar, Ismail, Dr.; Saif, Ala’eddin A. (Elsevier, 2014-01)
      This paper reports a comparative study of the influence of elevated temperature on geopolymer paste, mortars and lightweight aggregate geopolymer concrete (LWAGC) systems made by using fly ash (FA) as only source material. ...
    • Effects of heat slug shapes on the heat dissipation of high power LED 

      Zaliman, Sauli, Dr.; Vairavan, Rajendaran;; Retnasamy, Vithyacharan (Trans Tech Publications Inc., 2014-02)
      High power light emitting diodes are currently challenged by thermal issue of high heat generation which limits the reliability and efficiency. Each component in the LED package has a significant role in heat dissipation. ...
    • The effects of multiple zincation process on Aluminum Bond Pad surface for Electroless Nickel Immersion Gold deposition 

      Mohd Khairuddin, Md Arshad; Ibrahim, Ahmad; Azman, Jalar; Ghazali, Omar; Uda, Hashim (American Society of Mechanical Engineers (ASME), 2006-09)
      This paper reports the effects of a multiple zincation processon the Al bond pad surface prior to electroless nickel immersion gold deposition. The study of multiple zincation comprises the surface topogtaphy and morphology ...
    • Electrical behaviour of MEH-PPV based diode and transistor 

      Ali Hussain, Reshak, Prof. Dr.; Mukhzeer, Mohamad Shahimin, Dr.; Nurjuliana, Juhari; Suppiah, S. (Elsevier Ltd., 2013-11)
      The potential of organic semiconductor based devices for light generation is demonstrated by the commercialisation of display technologies using organic light emitting diode (OLED). In OLED, organic materials plays an ...
    • Electrical characterization and equivalent circuit analysis of (Bi1.5Zn0.5)(Nb0.5Ti1.5)O7 Pyrochlore, a relaxor ceramic 

      Rozana Aina, Maulat Osman, Dr.; West, Anthony R. (The American Institute of Physics (AIP), 2011)
      The ac impedance of (Bi1.5Zn0.5)(Nb0.5Ti1.5)O7, a relaxor ceramic with the pyrochlore structure, has been measured over the temperature range 10–1073K and analyzed using a combination of traditional, fixed-frequency ...
    • Electrical properties of fresnoite Ba2TiSi2O8 using impedance spectroscopy 

      Rozana Aina, Maulat Osman, Dr. ; Mohd Sobri, Idris, Dr. (Trans Tech Publications, 2013)
      Fresnoite with composition Ba2TiSi2O8 (B2TS2) was first found in 1965, adopting a non-centrosymmetric structure. It also reported to crystallize in a tetragonal unit cell with a=8.52Å and c=5.210Å leading to some possible ...
    • Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor 

      Saif, Ala’eddin A.; Poopalan, Prabakaran, Prof. Madya (Elsevier Ltd., 2011-08)
      Perovskite ferroelectric BaxSr1-xTiO 3 (x = 0.5, 0.6, 0.7 and 0.8) thin films have been fabricated as metal-ferroelectric-insulator-semiconductor (MFIS) configurations using a sol-gel technique. The C-V characteristics for ...
    • Electronic properties of orthorhombic LiGaS2 and LiGaSe 2 

      Reshak, Ali H.; Auluck, S.; Kityk, I. V.; Yarub K.A, Al-Douri; Khenata, R.; Bouhemadou, A. (Springer Berlin/Heidelberg, 2009)
      We report theoretical calculations of the band structure and density of states for orthorhombic LiGaS2 (LGS) and LiGaSe2 (LGSe). These calculations are based on the full potential linear augmented plane wave (FP-LAPW) ...
    • Error correction for foot clearance in real-time measurement 

      Yufridin, Wahab, Dr.; Norantanum, Abu Bakar; Mazlee, Mazalan (Institute of Physics Publishing, 2014)
      Mobility performance level, fall related injuries, unrevealed disease and aging stage can be detected through examination of gait pattern. The gait pattern is normally directly related to the lower limb performance condition ...
    • An estimation of the energy and exergy efficiencies for the energy resources consumption in the transportation sector in Malaysia 

      Saidur, R.; Munavvar, Abdul Sattar; Masjuki, H. H.; Ahmed, S.; Uda, Hashim (Elsevier Ltd., 2007-08)
      The purpose of this work is to apply the useful energy and exergy analysis models for different modes of transport in Malaysia and to compare the result with a few countries. In this paper, energy and exergy efficiencies ...
    • An excellent gain flatness 3.0-7.0 GHz CMOS PA for UWB applications 

      Sohiful Anuar, Zainol Murad; Pokharel, R. K.; Galal, A. I. A.; Sapawi, R.; Kanaya, H.; Yoshida, K. (Institute of Electrical and Elctronics Engineering (IEEE), 2010-09)
      This letter presents an excellent gain flatness CMOS power amplifier (PA) for UWB applications at 3.0-7.0 GHz in TSMC 0.18 μm CMOS technology. The UWB PA proposed here employs a current-reused technique to enhance the gain ...
    • Extended MASTAR modeling of DIBL in UTB and UTBB SOI MOSFETs 

      Mohd Khairuddin, Md Arshad, Dr.; Raskin, Jean-Pierre, Prof.; Kilchytska, Valeriya, Dr.; Andrieu, François, Dr.; Scheiblin, Pascal; Faynot, O.; Flandre, Denis, Prof. (Institute of Electrical and Electronics Engineers (IEEE), 2012-01)
      This paper analyzes and models the drain-induced barrier lowering (DIBL) for ultrathin silicon body and ultrathin silicon body and thin buried oxide (UTBB) SOI MOSFETs. The channel depth appears as the primary factor in ...
    • Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process 

      Sutikno, Madnasri; Uda, Hashim; Zul Azhar, Zahid Jamal (IOP Publishing Ltd, 2008-01-29)
      The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ...
    • Face recognition using eigenfaces and neural networks 

      Mohamed Rizon; Muhammad Firdaus, Hashim; Puteh, Saad; Sazali, Yaacob, Prof. Dr.; Mohd Rozailan, Mamat; Ali Yeon, Md Shakaff, Prof. Dr.; Abdul Rahman, Saad; Hazri, Desa, Dr.; Karthigayan, M. (Science Publications, 2006)
      In this study, we develop a computational model to identify the face of an unknown person’s by applying eigenfaces. The eigenfaces has been applied to extract the basic face of the human face images. The eigenfaces is ...
    • Facial features for template matching based face recognition 

      Chai, Tong Yuen; Mohd Rizon, Mohamed Juhari, Prof. Dr.; Woo, San San; Tan, Ching Seong, Dr. (Science Publications, 2009)
      Problem statement: Template matching had been a conventional method for object detection especially facial features detection at the early stage of face recognition research. The appearance of moustache and beard had ...
    • Far-infrared optical transmission through asymmetrical ferroelectric films 

      Mohamad Nazri, Abdul Halif (Research India Publications, 2005)
      Investigation of far-infrared (FIR) spectroscopy for symmetrical ferroelectric (FE) films are discussed theoretically based on the basis of the Tilley-Zeks (TZ) model using Landau free energy expansion, Landau- Khalatnikov ...
    • Ferroelectric and relaxor ferroelectric to paralectric transition based on Lead Magnesium Niobate (PMN) materials 

      Rozana Aina, Maulat Osman, Dr.; Mohd Sobri, Idris, Dr.; Zul Azhar, Zahid Jamal, Dato Prof. Dr.; Sanna, Taking, Dr.; Syarifah Norfaezah, Sabki, Dr.; Poopalan, Prabakaran, Dr.; Mohd Natashah, Norizan; Ili Salwani, Mohamad (Trans Tech Publications, 2013)
      First ferroelectric materials were found in Rochelle salt was in a perovskite structure. Lead Magnesium Niobate (PMN) is a perovskites with a formula of PbMg1/3Nb2/3O3 (PMN) and are typical representatives for most of all ...
    • Fibrous material density difference analysis using light reflectance 

      Ong, Tee Say; Zaliman, Sauli, Dr.; Retnasamy, Vithyacharan; Khairul Anwar, Mohamad Khazali; Nooraihan, Abdullah (Trans Tech Publications, 2014)
      The objective of this work is designed and fabricated a lab module tester to differentiate the different type of printing paper quality which available commercially was done. Laser light source was used to differentiate ...