| dc.contributor.author | Najim, Jassim M. | |
| dc.date.accessioned | 2008-10-10T03:46:00Z | |
| dc.date.available | 2008-10-10T03:46:00Z | |
| dc.date.issued | 2008 | |
| dc.identifier.citation | International Journal of Nanoelectronics and Materials, vol. 1 (1), 2008, pages 35-39. | en_US |
| dc.identifier.issn | 1985-5761 (Printed) | |
| dc.identifier.issn | 1997-4434 (Online) | |
| dc.identifier.uri | http://www.unimap.edu.my | |
| dc.identifier.uri | http://dspace.unimap.edu.my/123456789/2374 | |
| dc.description | Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008. | en_US |
| dc.description.abstract | The diode 1N1405 type silicon is subjected to different levels of energy and time
irradiation. We have about three times; at every time we have measured the forward and
reverse bias voltage of the diode to know what is the difference between the electrical
properties of the same diode without irradiation of x-ray. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Universiti Malaysia Perlis | en_US |
| dc.subject | X-rays | en_US |
| dc.subject | Electrical properties | en_US |
| dc.subject | Semiconductors | en_US |
| dc.subject | Silicon | en_US |
| dc.subject | Electromagnetic waves | en_US |
| dc.title | Studying the effect of X-ray radiation on the electrical properties of diodes 1N1405 | en_US |
| dc.type | Article | en_US |
