Studying the effect of X-ray radiation on the electrical properties of diodes 1N1405
Najim, Jassim M.
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The diode 1N1405 type silicon is subjected to different levels of energy and time irradiation. We have about three times; at every time we have measured the forward and reverse bias voltage of the diode to know what is the difference between the electrical properties of the same diode without irradiation of x-ray.