Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "III-nitride"
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Physical properties of porous In₀.₀₈Ga₀.₉₂N
(Universiti Malaysia Perlis, 2015)In this study, nanoporous structures on In₀.₀₈Ga₀.₉₂N/AlN/Si thin films with a thickness of 1 μm were synthesized by photoelectrochemical etching technique at various etching durations. The structural and optical properties ...