Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "GAN"
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Swift heavy ion effects in gallium nitride
(Universiti Malaysia Perlis, 2008)GaN layers were irradiated at room temperature with swift heavy ions. AFM (atomic force microscopy) images of specimens irradiated under grazing incidence show tracks. With 74 MeV Kr, the contrast is very faint unlike for ...