Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Subject "AlGaN/GaN RTD"
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Effect of device parameters on transmission coefficient of Al₀.₃Ga₀.₈N/GaN Resonant Tunneling Diode grown on silicon substrate
(Universiti Malaysia Perlis, 2013)AlGaN/GaN Resonant Tunneling Diodes (RTD) have increasingly become important since these are ideally suited for high power, high frequency performance and capable of providing negative differential resistance at room ...