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    • Physical properties of porous In₀.₀₈Ga₀.₉₂N 

      H. Abud, Saleh; Hassan, Z.; Yam, F. K. (Universiti Malaysia Perlis, 2015)
      In this study, nanoporous structures on In₀.₀₈Ga₀.₉₂N/AlN/Si thin films with a thickness of 1 μm were synthesized by photoelectrochemical etching technique at various etching durations. The structural and optical properties ...