Browsing International Journal of Nanoelectronics and Materials (IJNeaM) by Author "Chaudhry, Amit"
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Analytical modeling of energy quantization effects in nanoscale mosfets
Chaudhry, Amit; Nath Roy, Jatindra (Universiti Malaysia Perlis, 2012)In this paper, we have studied and developed an analytical model for the inversion layer quantization in nano-metal oxide semiconductor field effect oxide (MOSFET) using the variation approach. Explicit surface potential ... -
Gate oxice leakage in poly-depleted nanoscale-MOSFET: a quantum mechanical study
Chaudhry, Amit; Nath Roy, Jatinder (Universiti Malaysia Perlis, 2011)In this paper, we investigate the effect of depletion and doping variation in the poly-silicon on the direct tunneling current of an ultra thin oxide n-MOSFET. The one dimension (1-D) poly silicon depletion effect has been ... -
Quantum mechanical direct leakage currents in a sub 10 nm mosfet: a rigorous modeling study
Chaudhry, Amit; Nath Roy, Jatindra (Universiti Malaysia Perlis, 2012)In this paper, we have developed a rigorous model for the quantum mechanical source to drain electron/hole tunneling in sub 10nm nanometer scale metal-oxide-semiconductor field effect transistor (MOSFETs). Inversion layer ...