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    • RF behavior of undoped channel ultra-thin body with ultra-thin BOX MOSFETs 

      Mohd Khairuddin, Md Arshad, Dr.; Mostafa, Emam; Kilchytska, Valeria I., Dr.; Andrieu, François, Dr.; Flandre, Denis, Prof.; Raskin, Jean-Pierre P., Prof. (Institute of Electrical and Electronics Engineers (IEEE), 2012-01)
      RF performance of ultra-thin body with ultra-thin buried oxide (BOX), so-called UTBB, MOSFETs with gate length down to 30 nm is presented. Current gain cut-off frequency f T and maximum oscillation frequency f max of 160 ...