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A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
(Elsevier B.V., 2007-05)
The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, ...
Single-Electron Transistors (SET): literature review
(Kolej Universiti Kejuruteraan Utara Malaysia, 2005)
Single-electron transistor (SET) is a key element in our research field where device operation is based on one-by-one electron through the channel utilizing the Coulomb blockade effect. The SET are often discussed as ...
Reproducibility of silicon single electron quantum dot transistor
(Nano Science and Technology Institute, 2006)
In principle, based on the form of tunnel junction, single electron transistor (SET) can be classified into four types, i.e. nanowire SET, quantum dot SET, nanotube SET and point contact SET. Another classification is SET ...