Search
Now showing items 1-10 of 11
Quantum DOT Single Electron Transistor
(School of Microelectronic Engineering, 2008-01-09)
Design and fabrication of Nanowire-based conductance biosensor using spacer patterning technique
(Institute of Electrical and Electronics Engineering (IEEE), 2008-12-01)
Materials have different behaviours and properties at the nanoscales (1-100nm). New theories and discoveries have been found in designing and fabricating at these sizes. Silicon Nanowires has allowed the introduction of ...
Nanowire conductance biosensor by spacer patterning lithography technique for DNA hybridization detection: Design and fabrication method
(Institute of Electrical and Electronics Engineers (IEEE), 2008-11-04)
The use of Silicon nanowires has allowed the introduction of many new signal transduction technologies in biosensors. The sensitivity and performance of biosensors is being improved by using doping process for their ...
SOI based nanowire single-electron transistors: design, simulation and process development
(Universiti Malaysia Perlis, 2008)
One of the great problems in current large-scale integrated circuits is increasing power
dissipation in a small silicon chip. Single-electron transistors which operate by means of one-by-one electron transfer, is relatively ...
Nanotechnology development in Malaysia: current status and implementation strategy
(Universiti Malaysia Perlis, 2008-12-05)
Nano-technology development needs all the support it could get to ensure the technology is being leveled up and benefits all mankind. Malaysia has started it own
micro-technology and nano-technology development since the ...
Mask design and fabrication of LiSFET for light sensor application
(Institute of Electrical and Electronics Engineering (IEEE), 2008-12-01)
The usage of MOSFET is not limited as amplifier and switch only but it has great potential to become the sensors when sensing mediums which integrated on to MOSFET. This research is intended to study the combination of ...
Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process
(IOP Publishing Ltd, 2008-01-29)
The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ...
Characterization of intermetallic growth of gold ball bonds on aluminum bond pads
(University of Malaya, 2008)
In this paper the intermetallic growth between gold ball bond and aluminum bond pad are studied. It involves thermal aging at 150 °C and 200 °C for various time intervals. The relationship between electrical resistance and ...
Si-quantum Dots (QD) and SiO2 tunnel barriers
(Universiti Malaysia Perlis (UniMAP), 2008-07)
Oxidation of Si for nanostructures on silicon-on-insulator
(SOI) substrates is a key process in the fabrication of Si
single electron transistor (SET). The most di cult aspect of
the fabrication process is the formation ...
Design and process development of silicon nanowire based DNA biosensor using electron beam lithography
(Institute of Electrical and Electronics Engineering (IEEE), 2008-12-01)
Silicon nanowires (SiNWs) have their unique feature such as similar diameters to biomolecules, chemically tailorable physical properties, enable to apply in biomolecule detection and can be fabricated as a high performance ...