Silicon carbide (SiC) as non-volatile random access memory (NVRAM) material

Abstract

The extraordinary intrinsic properties of silicon carbide (SiC) have made this material a suitablechoice to use in high temperature, high frequency, and high voltage applications. In addition to this, SiC could be employed as the base material for nonvolatile Random Access Memory, mainly due toits extremely low thermal-generation rate at room temperature. In this paper, the reasons of using thismaterial in this particular application are presented and the development of the application over thepast fifteen years is reviewed.