Search
Now showing items 1-2 of 2
A systematic dry etching process for profile control of quantum dots and nanoconstrictions
(Elsevier B.V., 2007-08)
In essence, quantum dot dimensions and others can be laterally and vertically defined by using either bottom up or top down methods respectively. In fabrication that uses top down method, etch process hold a chief role. ...
Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD
(Institute of Electrical and Electronics Engineering (IEEE), 2006-07)
Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by ...