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Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD
(Institute of Electrical and Electronics Engineering (IEEE), 2006-07)
Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by ...