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    A systematic dry etching process for profile control of quantum dots and nanoconstrictions 

    Madnarski, Sutikno; Uda, Hashim; Zul Azhar, Zahid Jamal (Elsevier B.V., 2007-08)
    In essence, quantum dot dimensions and others can be laterally and vertically defined by using either bottom up or top down methods respectively. In fabrication that uses top down method, etch process hold a chief role. ...
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    Cost Effective Negative Plenum Cleanroom for Microelectronic Engineering undergraduate 

    Uda, Hashim; Zul Azhar, Zahid Jamal; Mohammad Nuzaihan, Md Nor; Nur Hamidah, Abdul Halim (Kolej Universiti Kejuruteraan Utara Malaysia, 2005)
    The Negative Plenum Cleanroom which is design and built by KUKUM is primarily used for the teaching of the undergraduate microelectronic course. The cleanroom is approximately 115m² in size. The level of cleanliness in the ...
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    A new Microelectronic Engineering degree curriculum in KUKUM 

    Yufridin, Wahab; Ali Yeon, Md Shakaff; Zul Azhar, Zahid Jamal; Zuraidah, Mohd Zain; Reha, Abdul Razak; Uda, Hashim (Association of Engineering Education in South East Asia and the Pacific, 2005-12-08)
    This paper presents the development and implementation of a new curriculum at the Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM). The curriculum is specifically developed for the Bachelor of Engineering Degree program ...
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    Nano patterning of cone dots and nano constrictions of negative e-beam resist for single electron transistor fabrication 

    Sutikno, Madnasri; Uda, Hashim; Zul Azhar, Zahid Jamal (Springer New York, 2007-12)
    We present an optimization of nano dot of negative tone e-beam resist which is a very important step in single electron transistor fabrication process. The optimum design of dot and nano constriction plays a significant ...
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    Development of a PMV-based thermal comfort modelling 

    Shazmin Aniza, Abdul Shukor; Karl Kohlhof; Zul Azhar, Zahid Jamal (International Association of Science and Technology for Development (IASTED)/ACTA Press, 2007-05)
    This paper concentrates on the modelling development for a PMV-based thermal comfort system. Operators can define their own expression towards the surroundings by inserting the respective value of PMV and the system will ...
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    Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography 

    Uda, Hashim; Sutikno, Madnasri; Zul Azhar, Zahid Jamal (Nano Science and Technology Institute, 2007)
    Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ...
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    Educational collaborations with Thai universities: the case of KUKUM 

    Zuraidah, Mohd Zain; Zul Azhar, Zahid Jamal; Ali Yeon, Md Shakaff (Hatyai University (HU), 2004-08-27)
    With increasing population and limited resources, numerous factions in the world today compete hard with one another. In accordance to Darwin’s ‘survival of the fittest’, only the strongest and loudest endure. Against this ...
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    Fabrication and characterization of Si quantum dots and SiO2 tunnel barriers grown by a controlled oxidation process 

    Sutikno, Madnasri; Uda, Hashim; Zul Azhar, Zahid Jamal (IOP Publishing Ltd, 2008-01-29)
    The control of the growth of silicon dioxide (SiO2) and the formation of quantum dots (QDs) play an important role in the fabrication of single-electron transistors (SETs). In this work, SET structures were fabricated using ...
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    Growth of GaN quantum dots using [(C2H5)4]Si by plasma assisted MOCVD 

    Arsyad, F. S.; Subagio, A.; Sutanto, H.; Arifin, P.; Budiman, M.; Barmawi, M.; Husien, I.; Zul Azhar, Zahid Jamal (Institute of Electrical and Electronics Engineering (IEEE), 2006-07)
    Growth of GaN quantum dots on AlGaN layer using [(C2H 5)4]Si [TESi] by plasma assisted metal organic chemical vapor deposition (PA-MOCVD) is reported. The surface profile of the grown GaN quantum dot was determined by ...
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    Nano-silver microcavity enhanced UV GaN light emitter 

    Naser Mahmoud, Ahmed; Zaliman, Sauli; Uda, Hashim; Zul Azhar, Zahid Jamal (Inderscience Enterprises Limited, 2009)
    We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire ...
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    Zul Azhar, Zahid Jamal (12)
    Uda, Hashim (7)Sutikno, Madnasri (3)Ali Yeon, Md Shakaff (2)Zuraidah, Mohd Zain (2)... View MoreSubjectTransistors (3)Nanotechnology (2)Quantum dot (2)Quantum electronics (2)Silicon (2)... View MoreDate Issued2010 - 2018 (2)2004 - 2009 (10)

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