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A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation
(Elsevier B.V., 2007-05)
The tunnel barriers generation and the quantum dot size shrinkage play a significant role in single-electron transistor (SET) fabrication. Because the numerically etch indicators were not found, the technical indicators, ...
A systematic dry etching process for profile control of quantum dots and nanoconstrictions
(Elsevier B.V., 2007-08)
In essence, quantum dot dimensions and others can be laterally and vertically defined by using either bottom up or top down methods respectively. In fabrication that uses top down method, etch process hold a chief role. ...
Designing of masks for quantum dot single electron transistor fabrication using E-beam nanolithography
(Nano Science and Technology Institute, 2007)
Quantum dot single electron transistor (QD SET) is able to be fabricated through a joint technique of e-beam lithography (EBL), pattern dependent oxidation (PADOX) and high density plasma etching. In this research, we have ...