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    • Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes 

      Mazari, H.; Benamara, Z.; Ameur, K.; Benseddik, N.; Bonnaud, O.; Olier, R.; Gruzza, B. (Universiti Malaysia Perlis, 2009)
      The current-voltage (I-V) and capacitance voltage (C-V) characteristics of Al/n-GaAs and Al/p-GaAs diodes on GaAs substrate treated by Ru3+ ions are investigated and compared with characteristics of GaAs diodes on GaAs ...