International Journal of Nanoelectronics and Materials (IJNeaM)
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/2296
2024-03-28T11:03:37ZTaguchi Method for p-MOS threshold voltage optimization with a gate length of 22nm
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78125
Taguchi Method for p-MOS threshold voltage optimization with a gate length of 22nm
Izwanizam, Yahaya; F. Salehuddin; K. E. Kaharudin; A. H. Afifah Maheran
This paper describes the virtual design of a 22nm gate length p-type metal oxide
semiconductor, PMOS. Silvaco, TCAD tools were used to fabricate the device design and to
characterize the device’s electrical properties. Fixed field scaling rules are applied to obtain
the transistor’s electrical parameters set by ITRS 2013. In order to take the challenges that
arise in the fabrication of nano-sized transistors and enhance their performance, advanced
and novel technologies are applied. Using the statistical modelling of L9 Taguchi
methodology, the development process is primarily focused on the tool's edge voltage. Four
parameters have been divided into three distinct steps in order to conduct nine different
experiments. The final confirmation result indicates that VTH is closer to the nominal value
-0.206V following optimization techniques. This matches the ITRS 2013 requirements for
high performance. This paper examines the design of a p-MOS double gate containing a layer
of graphene as it is known to have a high mobility value
Link to publisher's homepage at http://ijneam.unimap.edu.my/
2023-01-01T00:00:00ZVirtual fabrication of 14nm gate length n-Type double gate MOSFET
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78124
Virtual fabrication of 14nm gate length n-Type double gate MOSFET
N. H. N. M. Nizam; F. Salehuddin; K. E. Kaharudin; Noor Faizah Z. A
Due to Moore's law, it is that predicted the channel length of a metal-oxide-semiconductor
Field Effect Transistor (MOSFET) will tend to shrink from the submicron to the nanoscale
size. Thus, precision in the manufacturing process has become crucial. This study describes
the virtual fabrication as well as the electrical characteristics of a 14nm NMOS double gate
with a bilayer graphene/high-K/metal gate. In this device, Hafnium Dioxide (HfO2) is
employed as a high-k material, and Tungsten Silicide (WSix) is used as a metal gate. Several
Silvaco TCAD Tools, including ATHENA and ATLAS, were utilized in the fabrication and
simulation of the device, respectively. According to the simulation results, the optimal
threshold voltage (VTH), drive current (ION), and leakage current (IOFF) and subthreshold
slope (SS) values are 0.2059 V, 797.5650 μA/μm. 29.5794 nA/μm, and 89.1712x10-3 V
respectively. The findings of this research showed that the efficiency of this 14nm double gate
n-type MOSFET device is satisfactory because the threshold voltage and leakage current
parameters are in accordance with ITRS 2013, and that it may have been utilized as a utility
man in future modelling and optimization efforts.
Link to publisher's homepage at http://ijneam.unimap.edu.my/
2023-01-01T00:00:00ZThe effect of seeding method on the growth of zinc oxide nanorods
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78123
The effect of seeding method on the growth of zinc oxide nanorods
Yasmin. Z; H. H. M Yusof; Z. A. F. M. Napiah; M. Rashid; M. N. Shah Zainudin; H. Zainuddin
The paper presents the investigation of the method of seeding process for the growth of zinc
oxide (ZnO) nanorods (NRs) on the glass substrate as an electron transport layer (ETL) for
solar cells. The ZnO NRs were grown by using the hydrothermal method. The seeding process
was done via average deposition of zinc crystallite on the glass surface, and the process was
compared between with and without spin coating technique. The effect of spin coating
parameters during seeding phase on the growth of ZnO nanorods was also investigated in
this study. It was found that the sample prepared using the unfiltered solution without spin
coating in the seeding phase exhibited the densest ZnO NRs layer with the highest absorption
coefficient and high crystallinity.
Link to publisher's homepage at http://ijneam.unimap.edu.my/
2023-01-01T00:00:00ZTemperature effects on the optical properties of bismuth nanoparticles prepared by PLAL for antibacterial activity
http://dspace.unimap.edu.my:80/xmlui/handle/123456789/78122
Temperature effects on the optical properties of bismuth nanoparticles prepared by PLAL for antibacterial activity
Sally S. Hassan; Raad M. S. Al-Haddad
Bismuth nanoparticles (Bi NPs) constitute a promising technology for combating infectious
illnesses and bacterial resistance to antibacterial treatments. Bi NPs were synthesized by
Pulsed Laser Ablation in Liquid (PLAL) using a 532 nm second-harmonic generation Nd:YAG
laser. Bi NPs samples were prepared in 10, 35, 50, 75, and 90 ˚C water for various laser
energies and number of laser pulses. Ultraviolet-visible (UV-Vis) spectra measurements
revealed a characteristic plasmonic absorption band indicative of metallic bismuth nanosized
particles. Field emission scanning electron microscopy (FESEM) analysis showed that
the water temperature during the ablation process affected the size and morphology of Bi
NPs. The average Bi NP size at 60 ˚C was 28 nm, considerably smaller than the 55 nm average
observed at 10 ˚C. The antimicrobial properties of Bi NPs against two opportunistic
pathogens, E. coli and S. aureus, were assessed. For S. aureus, the inhibition zone of Bi NPs
prepared at 60 ˚C was greater than that of samples prepared at 10 ˚C. Further, Bi NPs
exhibited lower potency against E. coli than S. aureus in both samples.
Link to publisher's homepage at http://ijneam.unimap.edu.my/
2023-01-01T00:00:00Z