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|Title: ||Si-quantum Dots (QD) and SiO2 tunnel barriers|
|Authors: ||Sutikno, Madnasri|
Uda, Hashim, Prof. Dr.
Zul Azhar, Zahid Jamal, Prof. Dr.
|Keywords: ||Explore -- Penerbitan universiti|
UniMAP -- Publications
UniMAP -- Research and development
SiO2 tunnel barriers
Si-quantum Dots (QD)
|Issue Date: ||Jul-2008 |
|Publisher: ||Universiti Malaysia Perlis (UniMAP)|
|Department: ||Pejabat Timbalan Naib Canselor (Penyelidikan dan Inovasi)|
|Series/Report no.: ||Explore|
|Abstract: ||Oxidation of Si for nanostructures on silicon-on-insulator
(SOI) substrates is a key process in the fabrication of Si
single electron transistor (SET). The most di cult aspect of
the fabrication process is the formation of a nanometerscale
island sandwiched between two small capacitors
having a very thin insulator to allow electrons to pass
through in a stochastic process, known as PADOX. This
oxidation creates an island sandwiched between two
tunnel barriers which constitutes a SET. The constriction of
Si causes automatic tunnel barrier formation between
source–QD and drain-QD. The unique characteristics of
PADOX arises from i) the suppression of oxidation by
mechanical stress, and ii) the oxidation from below.|
|Appears in Collections:||Uda Hashim, Prof. Dr.|
Zul Azhar Zahid Jamal, Prof. Dr.
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