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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/dspace/handle/123456789/9934

Title: Si-quantum Dots (QD) and SiO2 tunnel barriers
Authors: Sutikno, Madnasri
Uda, Hashim, Prof. Dr.
Zul Azhar, Zahid Jamal, Prof. Dr.
???metadata.dc.contributor.url???: smadnasri@yahoo.com
Keywords: Explore -- Penerbitan universiti;UniMAP -- Publications;UniMAP -- Research and development;SiO2 tunnel barriers;Silicon-on-insulator (SOI);Si-quantum Dots (QD)
Issue Date: Jul-2008
Publisher: Universiti Malaysia Perlis (UniMAP)
???metadata.dc.publisher.department???: Pejabat Timbalan Naib Canselor (Penyelidikan dan Inovasi)
Citation: p.8-9
Series/Report no.: Explore
July 2008
Abstract: Oxidation of Si for nanostructures on silicon-on-insulator (SOI) substrates is a key process in the fabrication of Si single electron transistor (SET). The most di cult aspect of the fabrication process is the formation of a nanometerscale island sandwiched between two small capacitors having a very thin insulator to allow electrons to pass through in a stochastic process, known as PADOX. This oxidation creates an island sandwiched between two tunnel barriers which constitutes a SET. The constriction of Si causes automatic tunnel barrier formation between source–QD and drain-QD. The unique characteristics of PADOX arises from i) the suppression of oxidation by mechanical stress, and ii) the oxidation from below.
URI: http://hdl.handle.net/123456789/9934
ISSN: 1823-9633
Appears in Collections:Publications
Zul Azhar Zahid Jamal, Prof. Dr.
Uda Hashim, Prof. Dr.

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