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Please use this identifier to cite or link to this item:
http://hdl.handle.net/123456789/9934
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| Title: | Si-quantum Dots (QD) and SiO2 tunnel barriers |
| Authors: | Sutikno, Madnasri
Uda, Hashim, Prof. Dr.
Zul Azhar, Zahid Jamal, Prof. Dr. |
| E-mail: | smadnasri@yahoo.com |
| Keywords: | Explore -- Penerbitan universiti
UniMAP -- Publications
UniMAP -- Research and development
SiO2 tunnel barriers
Silicon-on-insulator (SOI)
Si-quantum Dots (QD) |
| Issue Date: | Jul-2008 |
| Publisher: | Universiti Malaysia Perlis (UniMAP) |
| Department: | Pejabat Timbalan Naib Canselor (Penyelidikan dan Inovasi) |
| Citation: | p.8-9 |
| Series/Report no.: | Explore
July 2008 |
| Abstract: | Oxidation of Si for nanostructures on silicon-on-insulator
(SOI) substrates is a key process in the fabrication of Si
single electron transistor (SET). The most di cult aspect of
the fabrication process is the formation of a nanometerscale
island sandwiched between two small capacitors
having a very thin insulator to allow electrons to pass
through in a stochastic process, known as PADOX. This
oxidation creates an island sandwiched between two
tunnel barriers which constitutes a SET. The constriction of
Si causes automatic tunnel barrier formation between
source–QD and drain-QD. The unique characteristics of
PADOX arises from i) the suppression of oxidation by
mechanical stress, and ii) the oxidation from below. |
| URI: | http://hdl.handle.net/123456789/9934 |
| ISSN: | 1823-9633 |
| Appears in Collections: | Uda Hashim, Prof. Dr.
Zul Azhar Zahid Jamal, Prof. Dr.
Publications
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