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Title: Structural properties studies of GaN on 6H-SiC by means of X-ray diffraction technique
Authors: C. G., Ching
S. S., Ng
Z., Hassan
H., Abu Hassan
???metadata.dc.contributor.url???: cgching17@yahoo.com
Keywords: X-ray diffraction (XRD);GaN;6H-SiC;Mismatch;Silicon carbide (SiC);International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
Issue Date: 9-Jun-2010
Publisher: Universiti Malaysia Perlis
???metadata.dc.publisher.department???: School of Materials Engineering & School of Environmental Engineering
Citation: p.55-57
Series/Report no.: Proceedings of the International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) 2010
Abstract: Epitaxial growth of GaN has become an interest topic in term of light emitting device fabrication. Most of the commercial GaN based device is normally grown on sapphire substrate. For power device application, SiC has been found to be a desirable candidate for GaN epilayer due to their high thermal conductivity, small lattice mismatch, and hexagonal lattice mismatch with cleaved facet for the laser cavity. In this paper, X-ray diffraction (XRD) technique is employed to study the structural properties of GaN thin film grown on 6H-SiC substrate. For conventional XRD ω-2θ scan, only diffraction peaks from GaN(002) and its multiple reflections were observed, along with reflections from SiC(006) peak. These results suggest that the GaN film is in wurtzite phase. For XRD rocking curve of omega scan of (002) diffraction plane of the GaN, a full width at half maximum of about 259 arcsec is obtained.
Description: International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.
URI: http://hdl.handle.net/123456789/9066
ISBN: 978-967-5760-02-0
Appears in Collections:Conference Papers

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