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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/9054

Title: Macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through vacuum annealed thermally nitrided SiO2 gate on 4H-SiC
Authors: Kuan, Yew Cheong
Wei, Chong Goh
???metadata.dc.contributor.url???: cheong@eng.usm.my
Keywords: Semiconductor-insulator interfaces;Dielectric phenomena;Surface roughening;4H SiC;International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
Issue Date: 9-Jun-2010
Publisher: Universiti Malaysia Perlis
???metadata.dc.publisher.department???: School of Materials Engineering & School of Environmental Engineering
Citation: p.169-173
Series/Report no.: Proceedings of the International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) 2010
Abstract: 10%-N2O nitrided SiO2 gate on n-type 4H SiC has been used to investigate macro and nanoscopic characteristics of SiC-SiO2 interface roughness and leakage current through the oxide. Non-contact mode atomic force microscope (AFM) and conductive AFM have been employed for the nanoscopic analyses, while macroscopic analyses have been performed by x-ray reflectivity and Semiconductor Parameter Analyser (SPA). From the nanoscopic analyses, it has found that the rougher the interface, the lower the leakage current. However, there is no relationship between the interface roughness obtained from nanoscopic measurement by AFM and leakage current density from macroscopic measurement by SPA.
Description: International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.
URI: http://hdl.handle.net/123456789/9054
ISBN: 978-967-5760-02-0
Appears in Collections:Conference Papers

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