DSpace
 

iRepository at Perpustakaan UniMAP >
The Library >
Conference Papers >

Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/dspace/handle/123456789/9020

Title: Evaluation of static performance of optoelectronic semiconductor devices under X-rays irradiation
Authors: Haider F., Abdul Amir
Fuei, Pien Chee
Keywords: Optoelectronic;X-rays;Total Ionizing Dose (TID);Commercial-off-the shelf (COTS);devices under test (DUT);current transfer ratio (CTR);International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI)
Issue Date: 9-Jun-2010
Publisher: Universiti Malaysia Perlis
???metadata.dc.publisher.department???: School of Materials Engineering & School of Environmental Engineering
Citation: p.11-16
Series/Report no.: Proceedings of the International Conference on X-Rays & Related Techniques in Research & Industry (ICXRI) 2010
Abstract: Nowadays, the space technology is becoming increasingly versatile and important. Most of the important technologies such as weather forecasting, remote sensing, navigation operations, satellite television, and telecommunications systems, as well as surveillance and command-and-control operations for national security purposes critically rely on space infrastructure. Consequently, these kinds of systems are subjected to the deleterious effects of the natural space radiation environment. Furthermore, there is a growing tendency in using commercial-off-the shelf (COTS) optoelectronic devices for replacing dedicated expensive radiation hardened photonics. Expanding photonic system into such environments requires a full understanding of the effects that ionizing radiation will have on the optoelectronic properties. In this research, optoelectronic devices consisted of an infrared light emitting diode and a phototransistor with no special handling or third party-packaging were irradiated to ionizing radiation utilizing x-rays. It was found that the devices under test (DUTs) undergo performance degradation in their functional parameters during exposure to x-rays. These damaging effects are depending on their current drives and also the Total Ionizing Dose (TID) absorbed. The TID effects by x-rays are cumulative and gradually take place throughout the lifecycle of the devices exposed to radiation.
Description: International Conference on X-Rays and Related Techniques in Research and Industry (ICXRI 2010) jointly organized by Universiti Malaysia Perlis (UniMAP) and X-Ray Application Malaysia Society (XAPP), 9th - 10th June 2010 at Aseania Resort Langkawi, Malaysia.
URI: http://hdl.handle.net/123456789/9020
ISBN: 978-967-5760-02-0
Appears in Collections:Conference Papers

Files in This Item:

File Description SizeFormat
Evaluation of Static Performance of Optoelectronic Semiconductor Devices under X-rays Irradiation.pdfAccess is limited to UniMAP community183.04 kBAdobe PDFView/Open
View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! Perpustakaan Tuanku syed Faizuddin Putra, Kampus Pauh Putra, Universiti Malaysia Perlis, 02600, Arau Perlis
TEL: +604-9885420 | FAX: +604-9885405 | EMAIL: rujukan@unimap.edu.my Feedback