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|Title: ||Nanowire formation using electron beam lithography|
|Authors: ||Rahman, S. F. A.|
Uda, Hashim, Prof. Dr.
Mohammad Nuzaihan, Md Nor
Mohamed Nuri, A. M.
Mohamad Emi Azri, Shohini
|Keywords: ||Electron beam lithography;Elphy quantum;Nanowire design;International Conference on Nanoscience and Nanotechnology|
|Issue Date: ||1-Jun-2009|
|Publisher: ||American Institute of Physics|
|Citation: ||Vol.1136, 2009, p.504-508|
|Series/Report no.: ||Proceedings of the International Conference on Nanoscience and Nanotechnology 2008|
|Abstract: ||Miniaturization and performance improvements are driving the electronics industry to shrink the feature size of semiconductor device. Because of its diffraction limit, conventional photolithography is becoming increasingly insufficient. In this paper, the recent development of the silicon nanowire based on electron beam lithography technique is reviewed. EBL technology is a best tool to fabricate patterns having nanometer feature sizes. In this project, the exposure process was carried out by an inhouse modified electron beam writing system using JOEL JSM 6460LA SEM integrated with ELPHY Quantum pattern generator. Following an introduction of this technique, the software description, pattern design formation and resist development are separately examined and discussed.|
|Description: ||Link to publisher's homepage at http://www.aip.org/|
|Appears in Collections:||Mohammad Nuzaihan Md Nor|
Uda Hashim, Prof. Dr.
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