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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/8824

Title: A silicon-oxide-silicon vertically separated electrode nanogap device structure
Authors: Noor, N. H. M.
Uda, Hashim, Prof. Dr.
Muhamad Emi Azry, Shohini
Nuri, A. M. M.
Keywords: Capacitance;Nanofabrication;Nanogap;Silicon contacts;International Conference on Nanoscience and Nanotechnology 2008
Issue Date: 1-Jun-2009
Publisher: American Institute of Physics
Citation: Vol. 1136, 2009, p.499-503
Series/Report no.: Proceedings of the International Conference on Nanoscience and Nanotechnology 2008
Abstract: In this study, we present a simple method to form a nanogap between two silicon contacts separated by a thin oxide gap. We also demonstrate the validity of dielectric spectroscopy results of two wafer samples (different oxide thickness), and we show that this vertically separated nanogap is better at providing accurate and conclusive results than a standard setup. The results demonstrate that this nanogap sensor presents a powerful potential platform for identifying conformational states of molecular scale events.
Description: Link to publisher's homepage at http://proceedings.aip.org/
URI: http://link.aip.org/link/?APCPCS/1136/499/1
ISSN: 0094-243X
Appears in Collections:Conference Papers
Uda Hashim, Prof. Dr.

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