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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/8810

Title: Design, simulation and characterization of 50nm p-well MOSFET using Sentaurus TCAD Software
Authors: Marlia, Morsin
Mohd Khairul Amriey
Abdul Majeed, Zulkipli
Rahmat, Sanudin
Keywords: P-well MOSFET;Sentaurus Process;Sentaurus Device;MOS (Metal Oxide Semiconductor) transistor;Malaysian Technical Universities Conference on Engineering and Technology (MUCEET)
Issue Date: 20-Jun-2009
Publisher: Universiti Malaysia Pahang
Citation: p.1-3
Series/Report no.: Proceedings of the Malaysian Technical Universities Conference on Engineering and Technology (MUCEET) 2009
Abstract: Device 50nm p-well MOSFET was designed, developed and optimized based on 90nm recipe using Sentaurus TCAD Software. In this project, there are two sub-programs used which are Sentaurus Process and Sentaurus Device. Sentaurus Process is a simulation process which in designing the semiconductor technology. While Sentaurus Device work as a device simulator to find the characteristic for each semiconductor design. The simulation results are shown in two dimensions (2D) in INSPECT and TECPLOT SV. The threshold voltages (Vth) for NMOS and PMOS of 50nm are 0.187V and -0.071V, the drain saturation current (Idsat) are 6.897e-04A and 1.22e-03A with the leakage current (Ioff) are 2.799e-07A and 2.507e-08A. The simulation results are almost the same with the theoretical.
Description: Malaysian Technical Universities Conference on Engineering and Technology organized by Universiti Malaysia Pahang in collaboration with Universiti Tun Hussein Onn Malaysia, Universiti Teknikal Malaysia Melaka & Universiti Malaysia Perlis on June 20th - 22nd, 2009, at MS Garden Hotel, Kuantan, Pahang, Malaysia.
URI: http://hdl.handle.net/123456789/8810
Appears in Collections:Conference Papers

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