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| Title: | Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition |
| Authors: | Ruslinda, Abd. Rahim
Uda, Hahim
Fukuda, Hisashi
Tada, Yoshihiro
Wainai, Noriyuki
Uesugi, Katsuhiro
Shimoyama, Yuhei |
| Keywords: | Atomic force microscopy
Carbon
Focused ion beam
Nanocrystal
Organic thin film transistor
Raman spectroscopy
International Conference on Nanoscience and Nanotechnology (ICONN) |
| Issue Date: | 1-Jun-2009 |
| Publisher: | American Institute of Physics |
| Citation: | Vol. 1136, p.297-301 |
| Series/Report no.: | Proceedings of the International Conference on Nanoscience and Nanotechnology (ICONN) 2008 |
| Abstract: | Metal-insulator-semiconductor field effect transistor (MISFET) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films using a focused ion beam chemical vapor deposition (FIBCVD) system with a precursor of low energy Ga+ ion and carbon source to fabricate organic thin film transistor (OTFT) memories. The crystallinity of nc-C was investigated by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate the evidence of crystallization of nc-C after annealed at 600 degree celcius by the sharp peak at 1565 cm-1 in graphite (sp2), while no peak of diamond (sp3) could be seen at 1333 cm-1. The AFM images showed the nc-C dots controlled with diameter of 100 nm, 200 nm and 300 nm, respectively. The above results revealed that the nc-C dots had sufficiently stick onto SiO2 films. The characteristic of the OTFTs operated at negative gate bias shows the p-channel enhancement behavior, and shows the most saturation behavior. |
| Description: | Link to publisher's homepage at http://scitation.aip.org/ |
| URI: | http://link.aip.org/link/?APCPCS/1136/297/1
http://hdl.handle.net/123456789/8637 |
| ISSN: | 0094-243X |
| Appears in Collections: | Uda Hashim, Prof. Dr.
Conference Papers
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