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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/8637

Title: Organic thin film transistor memories with carbon nanodots fabricated by focused ion beam chemical vapor deposition
Authors: Ruslinda, Abd. Rahim
Uda, Hashim, Prof. Dr.
Fukuda, Hisashi
Tada, Yoshihiro
Wainai, Noriyuki
Uesugi, Katsuhiro
Shimoyama, Yuhei
Keywords: Atomic force microscopy;Carbon;Focused ion beam;Nanocrystal;Organic thin film transistor;Raman spectroscopy;International Conference on Nanoscience and Nanotechnology (ICONN)
Issue Date: 1-Jun-2009
Publisher: American Institute of Physics
Citation: Vol. 1136, p.297-301
Series/Report no.: Proceedings of the International Conference on Nanoscience and Nanotechnology (ICONN) 2008
Abstract: Metal-insulator-semiconductor field effect transistor (MISFET) structures with a nanocrystal carbon (nc-C) embedded in SiO2 thin films using a focused ion beam chemical vapor deposition (FIBCVD) system with a precursor of low energy Ga+ ion and carbon source to fabricate organic thin film transistor (OTFT) memories. The crystallinity of nc-C was investigated by Raman spectroscopy and atomic force microscopy (AFM). Raman spectra indicate the evidence of crystallization of nc-C after annealed at 600 degree celcius by the sharp peak at 1565 cm-1 in graphite (sp2), while no peak of diamond (sp3) could be seen at 1333 cm-1. The AFM images showed the nc-C dots controlled with diameter of 100 nm, 200 nm and 300 nm, respectively. The above results revealed that the nc-C dots had sufficiently stick onto SiO2 films. The characteristic of the OTFTs operated at negative gate bias shows the p-channel enhancement behavior, and shows the most saturation behavior.
Description: Link to publisher's homepage at http://scitation.aip.org/
URI: http://link.aip.org/link/?APCPCS/1136/297/1
http://hdl.handle.net/123456789/8637
ISSN: 0094-243X
Appears in Collections:Conference Papers
Uda Hashim, Prof. Dr.

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