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|Title: ||Pressure effect on Si quantum-dot potential|
|Authors: ||Yarub K. A., Al-Douri|
Uda, Hashim, Prof. Dr.
Ahmed, N. M.
Zaliman, Sauli, Prof. Madya
|Keywords: ||Elemental semiconductor;Pressure effect;Quantum-dot;International Conference on Nanoscience and Nanotechnology|
|Issue Date: ||1-Jun-2009|
|Publisher: ||American Institute of Physics|
|Citation: ||Vol. 1136 (1), 2009, p. 11-15|
|Series/Report no.: ||Proceedings of the International Conference on Nanoscience and Nanotechnology 2009|
|Abstract: ||Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect of pressure on the quantum dot potential is noticed. The results are investigated to be used in advanced technologies.|
|Description: ||Link to publisher's homepage at http://scitation.aip.org/|
|Appears in Collections:||Conference Papers|
Uda Hashim, Prof. Dr.
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