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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/8501

Title: Pressure effect on Si quantum-dot potential
Authors: Yarub K. A., Al-Douri
Uda, Hashim, Prof. Dr.
Ahmed, N. M.
Zaliman, Sauli, Prof. Madya
Keywords: Elemental semiconductor;Pressure effect;Quantum-dot;International Conference on Nanoscience and Nanotechnology
Issue Date: 1-Jun-2009
Publisher: American Institute of Physics
Citation: Vol. 1136 (1), 2009, p. 11-15
Series/Report no.: Proceedings of the International Conference on Nanoscience and Nanotechnology 2009
Abstract: Application study of the quantum dot potential as a function of hydrostatic pressure for Si has been presented. This study has been calculated by means of our recent model using empirical pseudopotential method. The effect of pressure on the quantum dot potential is noticed. The results are investigated to be used in advanced technologies.
Description: Link to publisher's homepage at http://scitation.aip.org/
URI: http://link.aip.org/link/?APCPCS/1136/11/1
http://hdl.handle.net/123456789/8501
ISBN: 978-0-7354-0673-5
ISSN: 0094-243X
Appears in Collections:Conference Papers
Uda Hashim, Prof. Dr.

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