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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/dspace/handle/123456789/8345

Title: MOS Transistor Mask Design Using SEM Based E-Beam Lithography
Authors: Uda, Hashim, Prof. Dr.
Nur Hamidah, Abdul Halim
Mohammad Nuzaihan, Md Nor
Zul Azhar, Zahid Jamal, Prof. Dr.
???metadata.dc.contributor.url???: uda@kukum.edu.my
Keywords: E-Beam Lithography (EBL);MOS Transistor Mask Design;KUKUM -- Research;International Invention, Innovation & Technology Exhibition;ITEX 2006
Issue Date: 19-May-2006
Publisher: Malaysian Invention & Design Society (MINDS)
Series/Report no.: 17th International Invention, Innovation & Technology Exhibition 2006 (ITEX 2006)
Abstract: Electron beam lithography (EBL) is one of the alternative tools in transferring micro and nano circuit patterns from design editor to the substrate. EBL is state-of-the-art technology for micro and even to nano feature size in direct writing technology. SEM based EBL will be used to define the mask for device fabrication. These masks were designed in GDSII Editor in EBL System. Poly-methyl-metacrylate (PMMA) is used as a resist in the EBL.
Description: Prof. Dr. Uda Hashim and his team won silver for MOS Transistor Mask Design Using SEM Based E-Beam Lithography at ITEX 2006, 19th - 21st May 2006 at Kuala Lumpur Convention Centre (KLCC), Kuala Lumpur.
URI: http://hdl.handle.net/123456789/8345
Appears in Collections:Zul Azhar Zahid Jamal, Prof. Dr.
Universiti Malaysia Perlis
Uda Hashim, Prof. Dr.

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