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Title: MOS Transistor (Fabricated Using In-House Low Cost Facilities)
Authors: Uda, Hashim, Prof. Dr.
Zul Azhar, Zahid Jamal, Prof. Dr.
Nur Hamidah, Abdul Halim
Mohammadd Nuzaihan, Mohd Nor
Mohd Sallehudin, Saad
Phang, Keng Chew
Haffiz, Abd Razak
Bahari, Man
???metadata.dc.contributor.url???: uda@unimap.edu.my
Keywords: MOS transistor;Transistor;KUKUM -- Research;International Invention, Innovation & Technology Exhibition 2006;ITEX 2006
Issue Date: 19-May-2006
Publisher: Malaysian Invention & Design Society (MINDS)
Series/Report no.: 17th International Invention, Innovation & Technology Exhibition (ITEX) 2006
Abstract: MOS Transistor is divided into two types: NMOS and PMOS. Majority carrier od NMOS is electrons whereby PMOS is holes. The MOS transistor consists of three regions namely source, drain and gate. Fabrication of MOS transistor is done on 100mm silicon wafer. The active region of the transistor, which are source and drain are formed by either solid or liquid dopant. These transistors were fabricated using in-house low cost facility which is designed and developed by KUKUM internal expertise. The fabrication work is done in the cleanroom Class ISO 5 and ISO 6.
Description: Prof. Dr. Uda Hashim and his team won silver for MOS Transistor (Fabricated Using In-House Low Cost Facility) at ITEX 2006, 19th - 21st May 2006 at Kuala Lumpur Convention Centre (KLCC), Kuala Lumpur, Malaysia.
URI: http://hdl.handle.net/123456789/8298
Appears in Collections:Zul Azhar Zahid Jamal, Dato' Prof. Dr.
Universiti Malaysia Perlis
Uda Hashim, Prof. Dr.

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