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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/7453

Title: Correlation between the tonicity and the polarity in semiconductors
Authors: Y. Al, Douri
Keywords: Semiconductors;Polarity;Energy gap Egrx;Semiconductor engineering;Tonicities
Issue Date: 2007
Publisher: Universiti Malaysia Perlis
Citation: Journal of Engineering Research and Education, vol. 4, 2007, pages 81-85.
Abstract: Using the polarity with respect to energy gap Egrx, an empirical formula of tonicity factor is obtained for a specific class of semiconductors. The computation of tonicity character is distinguished with high degree of accuracy reaches that of other calculations like ab initio methods. Systematic behaviours are noticed in the calculated values of tonicities. It is seen that the experimental and calculated discrepancies for lll-V compounds are three times as for ll-VI ones. The results are in good agreement with that of Phillips and other authors.
Description: Link to publisher's homepage at http://www.unimap.edu.my/
URI: http://www.unimap.edu.my/
http://hdl.handle.net/123456789/7453
ISSN: 1823-2981
Appears in Collections:Journal of Engineering Research and Education

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