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|Title: ||Nano-silver microcavity enhanced UV GaN light emitter|
|Authors: ||Naser Mahmoud, Ahmed|
Zul Azhar, Zahid Jamal
|Keywords: ||GaN;Nanosilver;Photoluminescence;Plasmon frequency;Nanomanufacturing;Nanotechnology;Gallium nitride|
|Issue Date: ||2009|
|Publisher: ||Inderscience Enterprises Limited|
|Citation: ||International Journal of Nanomanufacturing, vol.4 (1-4), 2009, pages 26-33.|
|Abstract: ||We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire showed a photoluminescence (PL) peak around 364 nm and its full width half maximum was about 6.7 nm. Two types of microcavity, were fabricated: half-cavity GaN/sapphire/silver and full-cavity silver/ GaN/sapphire/silver. Photoluminescence measurements showed a two-fold intensity enhancement in half-cavity back mirror. In the full cavity samples, the amplitude of the photoluminescence is enhanced ten times when we used 50 nm silver as a front mirror. A tremendous more than 16-fold enhancement is obtained when silver mirror of 25 nm was used as a front mirror. The increase in the photoluminescence intensity is explained in terms of competition between increasing absorption in the cavity, silver surface plasmon coupling and increasing optical field-enhancement due to resonator.|
|Description: ||Link to publisher's homepage at http://www.inderscience.com/|
|ISSN: ||1746-9406 (Online)|
|Appears in Collections:||School of Microelectronic Engineering (Articles)|
Zul Azhar Zahid Jamal, Prof. Dr.
Uda Hashim, Prof. Dr.
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