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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/7426

Title: Nano-silver microcavity enhanced UV GaN light emitter
Authors: Naser Mahmoud, Ahmed
Zaliman, Sauli
Uda, Hashim
Zul Azhar, Zahid Jamal
???metadata.dc.contributor.url???: naser@unimap.edu.my
Keywords: GaN;Nanosilver;Photoluminescence;Plasmon frequency;Nanomanufacturing;Nanotechnology;Gallium nitride
Issue Date: 2009
Publisher: Inderscience Enterprises Limited
Citation: International Journal of Nanomanufacturing, vol.4 (1-4), 2009, pages 26-33.
Abstract: We report results of measurements that help to clarify the role of silver in the reflection of UV emission light from GaN. A GaN as an active layer was sandwiched between two silver metal reflectors. GaN layer on sapphire showed a photoluminescence (PL) peak around 364 nm and its full width half maximum was about 6.7 nm. Two types of microcavity, were fabricated: half-cavity GaN/sapphire/silver and full-cavity silver/ GaN/sapphire/silver. Photoluminescence measurements showed a two-fold intensity enhancement in half-cavity back mirror. In the full cavity samples, the amplitude of the photoluminescence is enhanced ten times when we used 50 nm silver as a front mirror. A tremendous more than 16-fold enhancement is obtained when silver mirror of 25 nm was used as a front mirror. The increase in the photoluminescence intensity is explained in terms of competition between increasing absorption in the cavity, silver surface plasmon coupling and increasing optical field-enhancement due to resonator.
Description: Link to publisher's homepage at http://www.inderscience.com/
URI: http://www.inderscience.com/offer.php?id=28107
http://hdl.handle.net/123456789/7426
ISSN: 1746-9406 (Online)
1746-9392 (Print)
Appears in Collections:School of Microelectronic Engineering (Articles)
Zul Azhar Zahid Jamal, Prof. Dr.
Uda Hashim, Prof. Dr.

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