iRepository at Perpustakaan UniMAP >
Journal Articles >
International Journal of Nanoelectronics and Materials (IJNeaM) >
Please use this identifier to cite or link to this item:
|Title: ||Investigation of the absorption coefficient, refractive index, energy band gap, and film thickness for Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN by optical transmission method|
|Authors: ||Naser M., Ahmed|
|Keywords: ||Absorption coefficients;Refractive index;Optical properties;III-Nitride energy band gap;Optoelectronic devices;Optoelectronic devices -- Design and construction;Optoelectronics -- Materials|
|Issue Date: ||2009|
|Publisher: ||Universiti Malaysia Perlis|
|Citation: ||International Journal of Nanoelectronics and Materials, vol.2 (2), 2009, pages 189-195.|
|Abstract: ||The design of optoelectronic devices fabricated from III-Nitride materials is aided by knowledge of refractive index and absorption coefficient of these materials .The optical properties of Al0.11Ga0.89N, Al0.03Ga0.97N, and GaN grown by MOVPE on sapphire were investigated by means of transmittance measurements .The optical transmission method is successfully used to determine the refractive index (n), absorption coefficient (α), film thickness and energy gap of three samples of film over the spectral range of (1-5 eV) .|
|Description: ||Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1; issue 1, 2008 & vol. 2; issue 1 & 2, 2009.|
|ISSN: ||1985-5761 (Printed)|
|Appears in Collections:||International Journal of Nanoelectronics and Materials (IJNeaM)|
Uda Hashim, Prof. Dr.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.