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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/dspace/handle/123456789/7120

Title: Effect of rapid thermal annealing on performance of large area crystalline silicon position sensitive detector
Authors: Raid A., Ismail
Abdulmhdi, T. Rahmitalla
Nasser, K. Mahdi
Keywords: Position sensitive detector;Si;Crystalline;Rapid thermal annealing;Semiconductors -- Heat treatment;Crystals;Crystalline silicon;Silicon
Issue Date: 2009
Publisher: Universiti Malaysia Perlis
Citation: International Journal of Nanoelectronics and Materials, vol.2 (2), 2009, pages 197-204.
Abstract: In this paper we report on the effect of rapid thermal annealing (RTA) on the characteristics of diffused crystalline p-n Si one-dimensional (1-D) position sensitive detector (PSD). The Si-PSDs are made with planer technology using thermal diffusion technique for Si doping. The lateral voltage produced by irradiation of He-Ne laser on PSD was parallel to the plane of junction and dependence linearly on laser spot position. The PSD that treated with best RTA condition (850 °C/15s) exhibited higher position sensitivity (104μV/mm) as compared with that for untreated PSD (31μV/mm).Furthermore, the best PSD gave a non-linearity error of 1.46%. The performance improvement factors such as uniformity, linearity, and responsivity of annealed Si-PSDs are presented and analyzed.
Description: Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009.
URI: http://hdl.handle.net/123456789/7120
ISSN: 1985-5761 (Printed)
1997-4434 (Online)
Appears in Collections:International Journal of Nanoelectronics and Materials

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