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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/7119

Title: Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices
Authors: Alwan, M. Alwan
Narges, Z. Abdulzahra
Naser Mahmoud, Ahmed
Halim, N.H.A.
Keywords: Porous silicon;Oxidation;Optical properties;Porous silicon -- Optical properties;Silicon
Issue Date: 2009
Publisher: Universiti Malaysia Perlis
Citation: International Journal of Nanoelectronics and Materials, vol.2 (2), 2009, pages 157-161.
Abstract: The morphological properties of the freshly and oxidized porous silicon at oxidation time (60, 90) sec were studied. Eyes, can see a blue emission from PSi after thermal oxidation, we can obvious increasing energy gab, that due to decrease silicon column (nano particles).Pore size and shape of n-type wafers are estimate and correlated with optical properties before and after rapid thermal oxidation (RTO).
Description: Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009.
URI: http://hdl.handle.net/123456789/7119
ISSN: 1985-5761 (Printed)
1997-4434 (Online)
Appears in Collections:International Journal of Nanoelectronics and Materials (IJNeaM)

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