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International Journal of Nanoelectronics and Materials >
Please use this identifier to cite or link to this item:
http://hdl.handle.net/123456789/7119
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| Title: | Influence of rapid thermal oxidation process on the optoelectronic characteristics of PSI devices |
| Authors: | Alwan, M. Alwan
Narges, Z. Abdulzahra
Naser Mahmoud, Ahmed
Halim, N.H.A. |
| Keywords: | Porous silicon
Oxidation
Optical properties
Porous silicon -- Optical properties
Silicon |
| Issue Date: | 2009 |
| Publisher: | Universiti Malaysia Perlis |
| Citation: | International Journal of Nanoelectronics and Materials, vol.2 (2), 2009, pages 157-161. |
| Abstract: | The morphological properties of the freshly and oxidized porous silicon at oxidation time (60, 90) sec were studied. Eyes, can see a blue emission from PSi after thermal oxidation, we can obvious increasing energy gab, that due to decrease silicon column (nano particles).Pore size and shape of n-type wafers are estimate and correlated with optical properties before and after rapid thermal oxidation (RTO). |
| Description: | Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol. 1 ; issue 1, 2008 & vol. 2 ; issue 1 & 2, 2009. |
| URI: | http://hdl.handle.net/123456789/7119 |
| ISSN: | 1985-5761 (Printed)
1997-4434 (Online) |
| Appears in Collections: | International Journal of Nanoelectronics and Materials
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