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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/dspace/handle/123456789/7118

Title: Influence of Ru3+ ions at Al/GaAs interface on Schottky diodes
Authors: Mazari, H.
Benamara, Z.
Ameur, K.
Benseddik, N.
Bonnaud, O.
Olier, R.
Gruzza, B.
Keywords: Al/GaAs diodes;Barrier height;Ru3+ ions;Diodes, Semiconductor;Gallium compounds
Issue Date: 2009
Publisher: Universiti Malaysia Perlis
Citation: International Journal of Nanoelectronics and Materials, vol.2 (2), 2009, pages 147-156.
Abstract: The current-voltage (I-V) and capacitance voltage (C-V) characteristics of Al/n-GaAs and Al/p-GaAs diodes on GaAs substrate treated by Ru3+ ions are investigated and compared with characteristics of GaAs diodes on GaAs untreated substrates. The diodes does not have to show an ideal behaviour of I-V characteristic with an ideality factor of 1.13 and barrier height of 0.85 eV and 0.6 eV for Al/n-GaAs and Al/p-GaAs diodes respectively. The forward bias saturation current found with a big value (10-10A, 10-12 A) in the Al/n-GaAs (untreated) Schottky diodes compared with Al/n-GaAs (treated) diodes. Contrary the forward bias saturation current found with a small value (10-7 A, 10-6 A) in the Al/p-GaAs (untreated) Schottky diodes compared with Al/p-GaAs (treated) diodes. The energy distribution of interface states was determined from the forward bias I(V) characteristics. The interface states density found large in the Al/GaAs (treated by Ru3+ ions) structure comparing with the Al/GaAs (untreated) structure.
Description: Link to publisher's homepage at http://www.unimap.edu.my/ ; Open access only applicable for vol vol. 1; issue 1, 2008 & vol. 2; issue 1 & 2, 2009.
URI: http://hdl.handle.net/123456789/7118
ISSN: 1985-5761 (Printed)
1997-4434 (Online)
Appears in Collections:International Journal of Nanoelectronics and Materials

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