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| Title: | SOI Single-Electron Transistors (SET) design and process development |
| Authors: | Amiza, Rasmi
Mohammad Nuzaihan, Md Nor
Uda, Hashim |
| Keywords: | Single-electron transistor (SET)
Single-electron transistor (SET) -- Design and construction
Transistors
Litography
Electron Beam Lithography (EBL)
Lithography, Electron beam |
| Issue Date: | 18-May-2005 |
| Publisher: | Kolej Universiti Kejuruteraan Utara Malaysia |
| Citation: | p.85-90 |
| Series/Report no.: | Proceedings of the 1st National Conference on Electronic Design |
| Abstract: | Single-electron transistor (SET) is attractive devices to use for large-scale integration. SET can be made very small,
dissipate little power, and can measure quantities of charge much faster than MOSFETs. This makes SET would replace
field-effect transistor (FET). In this paper, Electron Beam (EBeam) GDS II Editor Software is utilized to design a mask for
SOI SET fabrication. This system show promising result producing structure at nanometer scale node. Four masks step
are involved namely source/drain & gate mask, Poly-Si gate electrode mask, contact mask, and metallization mask. SOI SET
device design with a gate length and gate width of approximately 0.1μm and 0.02μm respectively is generated for fabrication
process. In addition, the processes involve in SOI SET fabrication are also discussed. |
| Description: | Organized by Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM), 18th - 19th May 2005 at Putra Palace Hotel, Kangar. |
| URI: | http://hdl.handle.net/123456789/7104 |
| Appears in Collections: | Uda Hashim, Prof. Dr.
Conference Papers
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