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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/7103

Title: Simulation using default model in ATHENA/SSUPREM4
Authors: Sharifah Norfaezah, Sabki
M. D. R., Hashim
Keywords: Ion implantation;Diffusion processes;CMOS transistors;Transient enhanced diffusion (TED)
Issue Date: 18-May-2005
Publisher: Kolej Universiti Kejuruteraan Utara Malaysia
Citation: p.109-111
Series/Report no.: Proceedings of the 1st National Conference on Electronic Design
Abstract: Ion implantation and diffusion processes are very important in the fabrication of bipolar and CMOS transistors. High selectivity’s of ion implantation plays a very important role in forming active device region and low ohmic contact. While annealing process after ion implantation is needed to activate the dopant and repair the damage. However, the diffusion process is accompanied by an anomalous transient enhanced diffusion (TED) of dopant. In order to study the ion implantation and diffusion processes, a process simulation using SSUPREM4 module in ATHENA is the easiest way to be used. However to study and to model the TED, a correct modelling must be adopted. As the right method, the simulation had to start with the default model before any other model can be used. The model is conducted using SSUPREM4 module in the process simulator ATHENA in SILVACO.
Description: Organized by Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM), 18th - 19th May 2005 at Putra Palace Hotel, Kangar.
URI: http://hdl.handle.net/123456789/7103
Appears in Collections:Conference Papers

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