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Please use this identifier to cite or link to this item: http://dspace.unimap.edu.my:80/xmlui/handle/123456789/7102

Title: PMMA characterization and optimization for Nano Structure formation
Authors: S Niza, Mohammad Bajuri
Nur Hamidah, Abdul Halim
Mohammad Nuzaihan, Md Nor
Uda, Hashim
Keywords: Electron beam lithography;Resolution;Resists thickness;Polymethyl-Methacrylate (PMMA);Lithography, Electron beam;Beam energy;Nano structure
Issue Date: 18-May-2005
Publisher: Kolej Universiti Kejuruteraan Utara Malaysia
Citation: p.81-83
Series/Report no.: Proceedings of the 1st National Conference on Electronic Design
Abstract: The limitations imposed on optical lithography by the wavelength of light have been overcome using electron lithography. Electron lithography offers high resolution because of the small wavelength of the 10-50 keV electrons and not sensitive in near UV. The resolution of electron lithography systems is limited by electron scattering in the resist not by the diffraction. One of the limitations of the resolution is resist thickness besides of beam energy and substrate compositions. Resist thickness is controlled by many factors such as velocity of the spinner, solid content and the viscosity of the resist. The resist commonly used on electron lithography is PMMA or Polymethyl-Methacrylate. In this paper, the effect of three parameters (as concerned above) on resist thickness is focused.
Description: Organized by Kolej Universiti Kejuruteraan Utara Malaysia (KUKUM), 18th - 19th May 2005 at Putra Palace Hotel, Kangar.
URI: http://hdl.handle.net/123456789/7102
Appears in Collections:Mohammad Nuzaihan Md Nor
Conference Papers
Uda Hashim, Prof. Dr.

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